Solid Phase Grain Growth and Electronic Properties of Si+-Implanted Glow-Discherged a-Si:H Thin Films

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概要

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• Si+ was implanted into hydrogenated thin amorphous silicon films. After Si+ implantation, the films were changed to the disordered state; correspondingly, the absorbance peaks in the infrared region relating to the Si–Hn stretching mode were all concentrated near 2000 cm-1. Subsequently, as a result of furnace annealing at 600°C, dendritic large and flat grains with improved electronic properties were observed. These are expected to be applicable for large area electronics on low-temperature glass.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-01-20

著者

• Noguchi Takashi

  Research And Development Dept. Semiconductor Group Sony

• Ohshima Takefumi

  Research and Development Dept., Semiconductor Group, SONY, 4-14-1 Asahi-cho, Atsugi-city 243

• Hayashi Hisao

  Research and Development Dept., Semiconductor Group, SONY, 4-14-1 Asahi-cho, Atsugi-city 243

関連論文

• UV Pulsed Laser Annealing of Si^+ Implanted Silicon Film and Low-Temperature Super-Thin Film Transistors
• Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions
• Frequency Dependence of the ac Josephson Effect in Nb Point Contacts in the Submillimeter-Wave Region
• Tunneling-Type Temperature Dependence of Critical Current in Nb-Sn Point Contact
• Effect of the Shunt Capacitance on the ac Josephson Effect in Nb Point Contacts
• Peak Shifts ot the Photo-Induced Magnetophonon Resonance in n-InSb at 4.2 K
• Solid Phase Grain Growth and Electronic Properties of Si+-Implanted Glow-Discherged a-Si:H Thin Films

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