Tunneling-Type Temperature Dependence of Critical Current in Nb-Sn Point Contact
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概要
- 論文の詳細を見る
The temperature dependence of dc I-V curves in Nb-Sn point contacts with extremely small contact areas was investigated. We found for the first time the tunneling-type temperature dependence of the critical current in the point contacts; some gap-related structures were also observed.
- 社団法人応用物理学会の論文
- 1980-08-05
著者
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NOGUCHI Takashi
Research and Development Dept., Semiconductor Group, SONY
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Mikoshiba N
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Morita Seizo
Research Institute Of Electrical Communication Tohoku University
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TAKADO Seiichi
Research Institute of Electrical Communication, Tohoku University
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Noguchi Takashi
Research Institute Of Electrical Communication Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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Takado Seiichi
Research Institute Of Electrical Communication Tohoku University
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Noguchi Takashi
Research And Development Dept. Semiconductor Group Sony
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