High-Frequency and Low-Dispersion Characteristics of Surface Acoustic Waves on AlN/Al_2O_3
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概要
- 論文の詳細を見る
We have investigated characteristics of surface acoustic waves (SAW) on AlN films grown by MO-CVD on the basal plane of sapphire (Al_2O_3). AlN films grown above 1180℃ are single crystals and have larger electromechanical coupling coefficients k^2, while films grown below 1180℃ have hillock-like misoriented grains which result in degradation of piezoelectricity and smaller values of k^2. It was found that a SAW device on (ZX)AlN/(ZY)Al_2O_3 shows lower dispersion than that previously reported on Al_2O_3 substrates.
- 社団法人応用物理学会の論文
- 1980-12-05
著者
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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SUGAI Kazuyoshi
Research Institute of Electrical Communication, Tohoku University
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Sugai Kazuyoshi
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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