Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing (SOLID STATE DEVICES AND MATERIALS 1)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-11-20
著者
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MUROTA Junichi
Research Institute of Electrical Communication, Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Kohlhase Armin
Research Institute Of Electrical Communication Tohoku University:siemens Semiconductor Technology Si
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Murota Junichi
Research Institute Of Electrical Communication Tohoku University
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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CHENG Min-Lin
Research Institute of Electrical Communication, Tohoku University
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SATO Taketoshi
Research Institute of Electrical Communication, Tohoku University
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KOBAYASHI Shin-ichi
Research Institute of Electrical Communication, Tohoku University
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Cheng Min-lin
Research Institute Of Electrical Communication Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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Sato Taketoshi
Research Institute Of Electrical Communication Tohoku University:kokusai Electric Co. Ltd. Semicon.
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Kobayashi Shin-ichi
Research Institute Of Electrical Communication Tohoku University
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