MUROTA Junichi | Research Institute of Electrical Communication, Tohoku University
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概要
関連著者
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MUROTA Junichi
Research Institute of Electrical Communication, Tohoku University
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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室田 淳一
東北大学 電気通信研究所
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室田 淳一
東北大学
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USHIODA Sukekatsu
Research Institute of Electrical Communication, Tohoku University
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TSUCHIYA Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University
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SAKURABA Masao
Research Institute for Electrical Communications, Tohoku University
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Sakuraba Masao
Research Institute For Electrical Communications Tohoku University
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Ushioda Sukekatsu
Research Institute Of Electrical Communication Tohokn University
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Murota Junichi
Research Institute Of Electrical Communication Tohoku University
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Tsuchiya Toshiaki
Interdisciplinary Faculty Of Science And Engineering Shimane University
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Matsumoto Satoru
Department of Cardiology, Toyonaka Municipal Hospital
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Uehara Y
Advanced Technology R&d Center Mitsubishi Electric Corp. Department Of Chemistry Faculty Of Scie
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Abe Takumi
Department Of Advanced Materials Science Graduate School Of Frontier Sciences University Of Tokyo
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Takata M
Nagaoka Univ. Technology Niigata
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Uehara Y
Research Institute Of Electrical Communication Tohoku University:riken Photodynamics Research Center
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Uehara Yoichi
Research Institute Of Electrical Communication Tohoku University
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Mizutani Goro
School of Materials Science, Japan Advanced Institute of Science and Technology
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Maeda T
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Maeda T
Electrotechnical Lab. Tskuba Jpn
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Matsumoto S
Faculty Of Science And Technology Keio University
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Matsumoto Satoru
Department Of Electronics And Electrical Engineering Keio University
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Maeda Toru
Department Of Material Science Graduate School Of Engineering Tohoku Uniiversity
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Abe Takao
Isobe R&d Center Shin-etsu Handotai
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Wada K
Osaka Prefecture University
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Maeda T
Storage Technology Research Center Research & Development Group Hitachi Ltd.
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NAKABAYASHI Yukio
Department of Electronics and Electrical Engineering, Keio University
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Maeda T
Electrotechnical Lab. Ibaraki Jpn
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Maeda Tatsuro
Electrotechnical Laboratory
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Sakuraba Masao
Research Institute Of Electrical Communication Tohoku University
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Wada Kazuhiro
Department Of Nuclear Engineering Faculty Of Engineering Kyoto University
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Matsumoto S
Department Of Electronics And Electrical Engineering Keio University
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Mizutani Goro
School Of Materials Science Jaist
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SONODA Yasuyuki
Research Institute of Electrical Communication, Tohoku University
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MAEDA Takahiro
Research Institute of Electrical Communication, Tohoku University
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Sonoda Y
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Uehara Yoichi
Research Institute Of Electrical Communication Tohokn University
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OHMI Shun-ichiro
Tokyo Institute of Technology
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松浦 孝
東北大学電気通信研究所超高密度・高速知能システム実験施設
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和田 健司
大阪府立大学工学研究科
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土屋 敏章
島根大学 総合理工学部
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AKAI Tomonori
Department of Advanced Materials Science, Graduate School of Frontier Sciences, University of Tokyo
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Tsuchiya T
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Tsuchiya T
Department Of Electronics Doshisha University
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Watanabe Junji
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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MATSUURA Takashi
Research Institute of Electrical Communication, Tohoku University
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WADA Kazumi
Department of Materials Engineering, Graduate School of Engineering The University of Tokyo
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Morita Shinya
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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YAMAZAKI Takashi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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OHMI Shunichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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OHRI Hiroyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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OMI Hiroo
NTT Basic Research Laboratories, NTT Corporation
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SAKAI Tetsushi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Wada K
Hokkaido Univ. Sapporo Jpn
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OSMAN Hirman
Department of Electronics and Electrical Engineering, Keio University
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TOYONAGA Kazunari
Department of Electronics and Electrical Engineering, Keio University
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YOKOTA Kaori
Department of Electronics and Electrical Engineering, Keio University
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WADA Kazaumi
Department of Materials Science and Engineering, Massachusetts Institute of Technology
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SEGAWA Toru
Department of Electronics and Electrical Engineering, Keio University
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SAITO Kazumasa
Department of Electronics and Electrical Engineering, Keio University
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OSAMAN Hirman
Department of Electronics and Electrical Engineering, Keio University
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Matsuura T
Hokkaido Univ. Education Hakodate Jpn
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Omi Hiroo
Ntt Basic Research Laboratories
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Ohri Hiroyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sakai Tetsushi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Ushioda Sukekatsu
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Tsuchiya Toshiharu
Faculty Of Engineering Shizuoka University
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Osaman Hirman
Department Of Electronics And Electrical Engineering Keio University
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Kohlhase Armin
Research Institute Of Electrical Communication Tohoku University:siemens Semiconductor Technology Si
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Wada Kazumi
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo
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Segawa Toru
Department Of Electronics And Electrical Engineering Keio University
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Otsubo Koji
Research Institute Of Electrical Communication Tohoku University:(present Address) Fujitsu Laborator
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Matsumoto S
Ntt Telecommunications Energy Laboratories
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Saito Kazumasa
Department Of Electrical Engineering Keio University
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Watanabe J
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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WATANABE Junichi
Research Institute of Electrical Communication, Tohoku University
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TAKADA Masatoshi
Research Institute of Electrical Communication, Tohoku University
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Omi Hiroo
Ntt Basic Research Laboratories Ntt Corporation
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Takada Masatoshi
Research Institute Of Electrical Communication Tohoku University
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CHENG Min-Lin
Research Institute of Electrical Communication, Tohoku University
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SATO Taketoshi
Research Institute of Electrical Communication, Tohoku University
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KOBAYASHI Shin-ichi
Research Institute of Electrical Communication, Tohoku University
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Saito K
Akita Univ. Akita Jpn
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Tsuchiya Takenobu
Department Of Electrical Electronics And Information Engineering Kanagawa University
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Sakai Tetsushi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Cheng Min-lin
Research Institute Of Electrical Communication Tohoku University
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Wada Kazumi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Saito Keisuke
Application Laboratory Bruker Axs
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Matsuura Takashi
Research Institute Of Electrical Communication Tohoku University
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Nakabayashi Y
Department Of Electronics And Electrical Engineering Keio University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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Sato Taketoshi
Research Institute Of Electrical Communication Tohoku University:kokusai Electric Co. Ltd. Semicon.
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Kobayashi Shin-ichi
Research Institute Of Electrical Communication Tohoku University
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Yamazaki Takashi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Saito Kaichi
Kanagawa Industrial Technology Center
著作論文
- Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
- Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^Silicon/Natural Silicon Heterostructures
- Epitaxial Growth of Pure ^Si Layers on a Natural Si(100) Substrate Using Enriched ^SiH_4
- Light Emission from Si-Metal-Oxide-Semiconductor Tunnel Junctions
- Grating-Coupled Light Emission from the Slow Mode of Metal-Insulator-Metal Tunnel Junctions
- Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing (SOLID STATE DEVICES AND MATERIALS 1)
- Second Harmonic Generation from Si_Ge_x Epitaxial Films with a Vicinal Face:Film Thickness Dependence
- Optical Second Harmonic Generation in Si_Ge_x Film Epitaxially Grown on Si(100)
- Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
- Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)