Tsuchiya Toshiaki | Interdisciplinary Faculty Of Science And Engineering Shimane University
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関連著者
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Tsuchiya Toshiaki
Interdisciplinary Faculty Of Science And Engineering Shimane University
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TSUCHIYA Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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MUROTA Junichi
Research Institute of Electrical Communication, Tohoku University
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Sakuraba Masao
Research Institute For Electrical Communications Tohoku University
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Yoshida Toshiyuki
Interdisciplinary Faculty Of Science And Engineering Shimane University
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SAKURABA Masao
Research Institute for Electrical Communications, Tohoku University
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Sakuraba Masao
Research Institute Of Electrical Communication Tohoku University
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Sato Y
Toshiba Corp. Kawasaki Jpn
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SATO Yasuhiro
NTT Microsystem Integration Laboratories
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Kado Yuichi
Ntt Micro System Integration Laboratories
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Murota Junichi
Research Institute Of Electrical Communication Tohoku University
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SATO Yasuhiro
NTT Telecommunications Energy Laboratories
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Kawachi Genshiro
Advanced Lcd Technology Development Center Co. Ltd.
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Hu Ming
Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan
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Kawachi Genshiro
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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松浦 孝
東北大学電気通信研究所超高密度・高速知能システム実験施設
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土屋 敏章
島根大学 総合理工学部
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室田 淳一
東北大学
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室田 淳一
東北大学 電気通信研究所
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Tsuchiya T
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Tsuchiya T
Department Of Electronics Doshisha University
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MATSUURA Takashi
Research Institute of Electrical Communication, Tohoku University
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Matsuura T
Hokkaido Univ. Education Hakodate Jpn
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ISHII Hiromu
NTT Microsystem Integration Laboratories
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KAMEI Toshikazu
NTT Advanced Technology Corp.
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KUDOU Kazuhisa
NTT Advanced Technology Corp.
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MACHIDA Katsuyuki
NTT Advanced Technology Corporation
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Tsuchiya Toshiharu
Faculty Of Engineering Shizuoka University
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Shimoyama Nobuhiro
Ntt Microsystem Integration Laboratories
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Nishimura Kazuyoshi
Ntt Microsystem Integration Laboratories
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Sasaki Nobuo
Silicon Technologies Labs Fujitsu Laboratories Ltd.
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ISHIHARA Takako
NTT Microsystem Integration Laboratories
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Miura Takafumi
Interdisciplinary Faculty Of Science And Engineering Shimane University
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Takei Michiko
Silicon Technologies Labs Fujitsu Laboratories Ltd.
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Sato Norio
Ntt Microsystem Integration Lab. Kanagawa Jpn
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Tsuchiya Takenobu
Department Of Electrical Electronics And Information Engineering Kanagawa University
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Matsuura Takashi
Research Institute Of Electrical Communication Tohoku University
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Shimoyama Nobuhiro
NTT Microsystem Integration Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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YOSHIDA Toshiyuki
Interdisciplinary Faculty of Science and Engineering, Shimane University
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Yuzuru Ohji
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yuzuru Ohji
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mori Yuki
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Morimura Yuta
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Tohru Mogami
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yuta Morimura
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Yuki Mori
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Tsuboi Shinzo
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Kado Yuichi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kudou Kazuhisa
NTT Advanced Technology Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0124, Japan
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Nishimura Kazuyoshi
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kamei Toshikazu
NTT Advanced Technology Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0124, Japan
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Sasaki Nobuo
Silicon Technologies Labs, Fujitsu Laboratories LTD., 10-1 Wakamiya, Morinosato, Atsugi, Kanagawa 243-0197, Japan
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Matsumura Masakiyo
Advanced LCD Technology Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Yamai Tsubasa
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Takei Michiko
Silicon Technologies Labs, Fujitsu Laboratories LTD., 10-1 Wakamiya, Morinosato, Atsugi, Kanagawa 243-0197, Japan
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Sakuraba Masao
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Mishima Seishi
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Ebiko Yoshiki
Silicon Technologies Labs, Fujitsu Laboratories LTD., 10-1 Wakamiya, Morinosato, Atsugi, Kanagawa 243-0197, Japan
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Machida Katsuyuki
NTT Advanced Technology Corp.
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Machida Katsuyuki
NTT Advanced Technology Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0124, Japan
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Tsuboi Shinzo
Advanced LCD Technology Development Center Co., Ltd., Kawasaki 212-0013, Japan
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Kawachi Genshiro
Advanced LCD Technology Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Kawachi Genshiro
Advanced LCD Technology Development Center Co., Ltd., Kawasaki 212-0013, Japan
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Tsuchiya Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan
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Tsuchiya Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Toshiaki Tsuchiya
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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Tsuchiya Toshiaki
Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu-cho, Matsue 690-8504, Japan
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Tsuchiya Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue 690-8504, Japan
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Tsuchiya Toshiaki
Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan
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Ishihara Takako
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yoshida Toshiyuki
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan
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Yamane Takuya
Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan
著作論文
- Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
- Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors
- Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body SOI MOSFETs
- Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating
- Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
- Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
- Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors
- The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal--Oxide--Semiconductor Field-Effect Transistors
- Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
- The Effect of Thick Interconnections Formed by Gold Electroplating on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors
- Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal–Oxide–Semiconductor Field-Effect Transistors
- Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
- Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps
- Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits