Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-07-15

著者

• TSUCHIYA Toshiaki

  Interdisciplinary Faculty of Science and Engineering, Shimane University

• Yoshida Toshiyuki

  Interdisciplinary Faculty Of Science And Engineering Shimane University

• Sato Y

  Toshiba Corp. Kawasaki Jpn

• SATO Yasuhiro

  NTT Telecommunications Energy Laboratories

• Tsuchiya Toshiaki

  Interdisciplinary Faculty Of Science And Engineering Shimane University

• YOSHIDA Toshiyuki

  Interdisciplinary Faculty of Science and Engineering, Shimane University

関連論文

• Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
• Evaluation of Sb_2O_3-Doped ZnO Varistors by Photoacoustic Spectroscopy
• Size Effects on Photoacoustic Spectra for GaAs Fine Powder
• Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors
• Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits
• Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
• Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors
• Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body SOI MOSFETs
• Electrical Properties of Ni-Cr-N Thin Films Deposited by Multitarget Reactive Sputtering : Surfaces, Interfaces, and Films
• Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating
• Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure
• Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
• Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
• Matching Properties of Polycrystalline Silicon Thin-Film Transistors Studied Using Wide-Use Circuit Simulator
• Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors
• The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal--Oxide--Semiconductor Field-Effect Transistors
• Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
• The Effect of Thick Interconnections Formed by Gold Electroplating on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors
• Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal–Oxide–Semiconductor Field-Effect Transistors
• Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
• Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps
• Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits
• Suppression of Floating Body Effects by Controlling Potential Profile in the Lower Body Region of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors

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