The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))

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概要

• 論文の詳細を見る

著者

• Tsuchiya Toshiaki

  Interdisciplinary Faculty Of Science And Engineering Shimane University

• Hu Ming

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

• Yamane Takuya

  Interdisciplinary Graduate School of Science and Engineering, Shimane University, Matsue 690-8504, Japan

関連論文

• Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
• Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors
• Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body SOI MOSFETs
• Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating
• Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
• Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
• Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors
• The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal--Oxide--Semiconductor Field-Effect Transistors
• Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
• The Effect of Thick Interconnections Formed by Gold Electroplating on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors
• Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal–Oxide–Semiconductor Field-Effect Transistors
• Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
• Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps
• Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits

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