Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

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• Fluctuations in not only the number but also the individual electronic properties of interface traps in small-gate-area metal–oxide–semiconductor field-effect transistors (MOSFETs) containing just a few interface traps have been directly observed. This observation is based on an understanding of a newly observed phenomenon in the charge pumping characteristics, i.e., on-time (or off-time)-dependent charge pumping characteristics. It is shown that the fluctuation in the number of interface traps contained in an individual MOSFET is fairly large, and that there are various interface traps with individual carrier capture rates. These fluctuations may have an impact on the variation in threshold voltage of future digital metal–insulator–semiconductor devices.

• 2010-06-25

著者

• Tsuchiya Toshiaki

  Interdisciplinary Faculty Of Science And Engineering Shimane University

• Yuzuru Ohji

  Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Yuzuru Ohji

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Mori Yuki

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Morimura Yuta

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Tohru Mogami

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Yuta Morimura

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Yuki Mori

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

• Toshiaki Tsuchiya

  Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

関連論文

• Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
• Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors
• Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body SOI MOSFETs
• Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating
• Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
• Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)
• Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
• Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors
• The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal--Oxide--Semiconductor Field-Effect Transistors
• Grain-Boundary Related Hot Carrier Degradation Mechanism in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
• The Effect of Thick Interconnections Formed by Gold Electroplating on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors
• Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal–Oxide–Semiconductor Field-Effect Transistors
• Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
• Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps
• Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits

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