Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
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概要
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We have studied unusual $V_{\text{th}}$ shifts in the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) of yttrium-doped HfO2 gate dielectrics. Both positive and negative stress conditions introduce shifts in opposite directions for yttrium-doped HfO2 in the low stress region. That is, a negative shift under a positive bias and a positive shift under a negative bias were observed. This is due to yttrium-related defects, with electron detrapping for PBTI and electron trapping for NBTI. Such defect formation can be suppressed by incorporating nitrogen into HfO2.
- 2010-04-25
著者
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Tetsu Morooka
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Dai Ishikawa
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tetsuro Ono
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Jiro Yugami
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kazuto Ikeda
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yuzuru Ohji
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Satoshi Kamiyama
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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