Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• MIYAZAKI Seiichi

  Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• INUMIYA Seiji

  Semiconductor Leading Edge Technologies, Inc.

• NARA Yasuo

  Semiconductor Leading Edge Technologies, Inc.

• Inumiya Seiji

  Semiconductor Leading Edge Technologies Inc. (selete)

• Inumiya Seiji

  Semiconductor Company Toshiba Corporation

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc. (selete)

• Matsuki Takeo

  Semiconductor Leading Edge Technologies Inc. (selete)

• YAMADA Keisaku

  Waseda Univ.

• AOYAMA Takayuki

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• UEDONO Akira

  Univ. of Tsukuba

• OHTSUKA Shingo

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• WADA Tetsunori

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Ohtsuka Shingo

  Semiconductor Leading Edge Technologies Inc. (selete)

• Wada Tetsunori

  Semiconductor Leading Edge Technologies Inc. (selete)

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Yamada Keisaku

  Univ. Of Tsukuba

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc. (selete)

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc.

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan

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