Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs

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2007-09-19

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Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
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Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
Extendibility of High Mobility HfSiON Gate Dielectrics
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
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Etch Profile Control of W/TiN/HfSiON and W/TaSiN/HfSiON Full-Metal Gates
Suppression of Metamorphoses of Metal/High-$k$ Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors
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Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation
Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
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Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
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Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors
Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-$k$ Gate Stacks
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