Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
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概要
- 論文の詳細を見る
We have undertaken a comprehensive analysis of the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) reliabilities of high-$k$/metal gate stacks. In the case of PBTI, electron traps constituted the main factor in drain current degradation resulting in an initial jump in threshold voltage shift due to fast transient electron traps, which depended only on stress voltage, because of the formation of positive oxygen vacancies near the cathode. However, in the case of NBTI, both interface state degradation (including interface hole traps) and hole traps in bulk HfSiON should be considered. We have clarified that the interface layer quality is related to not only the high transconductance but also the hole traps. The use of a high-quality interfacial layer, such as a wet oxide interface, represents a promising solution for the improvement of NBTI lifetime.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Miyazaki Seiichi
Hiroshima Univ.
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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YAMADA Keisaku
Waseda Univ.
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Hasunuma Ryu
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0821, Japan
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Tamura Chihiro
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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Yamabe Kikuo
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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Shiraishi Kenji
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
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Yamada Keisaku
Waseda University, 513 Waseda Tsurumakicho, Shinjuku, Tokyo 162-0041, Japan
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Yamabe Kikuo
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0821, Japan
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Miyazaki Seiichi
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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