Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
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概要
- 論文の詳細を見る
Changes in optical thickness and equivalent oxide thickness (EOT) during postdeposition annealing (PDA) and postnitridation annealing (PNA) were investigated to fabricate sub-1-nm-EOT nitrided hafnium silicate (HfSiON) gate dielectrics. In spite of optical thickness reductions by PDA, none of the PDA conditions could reduce the EOT and bring about the merit in leakage current reduction. On the other hand, high-temperature PNA without oxygen was found to be effective for reducing both optical thickness and EOT. Furthermore, leakage current reduction ratio and effective mobility were improved by applying high-temperature PNA. Consequently, the fabrication of 0.81-nm-EOT HfSiON gate dielectrics with a gate leakage current of 0.74 A/cm2 at 0.7 V and an electron mobility of 235 cm2/(V s) at 0.8 MV/cm (76% of SiO2) has been realized.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Miura Takayoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Miura Takayoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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