Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)

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概要

• 論文の詳細を見る

• The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important issues for the future nano-electronic devices. In order to reveal the electron injection process to the nano-structure, we have investigated the transient current characteristics of Si-Nano Dot floating-gate memory. We have reported a collective motion of electrons between the two-dimensional electron gas and the nano-dot based on the measurement of the Si-Nano Dot floating gate Memory. In this study, by extending our conventional tunneling model, we propose the collective tunneling model, which supports the collective motion of electrons, and this insight is useful for designing future nano-electronic devices.

• 社団法人電子情報通信学会の論文
• 2010-06-23

著者

• MAKIHARA Katsunori

  Hiroshima University

• IKEDA Mitsuhisa

  Hiroshima University

• Ikeda Mitsuhisa

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAGUCHI Masakazu

  Center for Interdisciplinary Research, Tohoku University

• ENDOH Tetsuo

  Center for Interdisciplinary Research, Tohoku University

• Sakurai Yoko

  Graduate School of Pure and Applied Science, University of Tsukuba

• Takada Yukihiro

  Graduate School of Pure and Applied Science, University of Tsukuba

• Nomura Shintaro

  Graduate School of Pure and Applied Science, University of Tsukuba

• Shiraishi Kenji

  Graduate School of Pure and Applied Science, University of Tsukuba

• Makihara Katsuonri

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Shigeta Yasuteru

  Graduate School of Life Science, University of Hyogo

• Takada Yukihiro

  Univ. Tsukuba Tsukuba‐shi Jpn

• Sakurai Yoko

  Graduate School Of Pure And Applied Science University Of Tsukuba

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Nomura Shintaro

  Graduate School Of Pure And Applied Science University Of Tsukuba

• Endoh Testuo

  Center For Interdisciplinary Research Tohoku University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Endoh Tetsuo

  Tohoku Univ. Sendai‐shi Jpn

• Shiraishi Kenji

  Graduate School Of Pure And Applied Sciences University Of Tsukuba

• Muraguchi Masakazu

  Tohoku Univ. Sendai‐shi Jpn

• Ikeda Mitsuhisa

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Shigeta Yasuteru

  Graduate School Of Life Science University Of Hyogo

• Muraguchi Masakazu

  Center For Interdisciplinary Research Tohoku University

• Muraguchi Masakazu

  Center For Interdisciplinary Research Tohoku University:center For Spintronics Integrated Systems To

• Makihara Katsuonri

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Shiraishi Kenji

  Graduate School Of Applied Physics Univ Of Tsukuba

• Takada Yukihiro

  Graduate School Of Pure And Applied Science University Of Tsukuba

• Shigeta Yasuteru

  Graduate School Of Engineering Science Osaka University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Shiraishi Kenji

  Graduate School Of Pure And Applied Science University Of Tsukuba

• Ikeda Mitsuhisa

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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