Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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MIYAZAKI S.
Graduate School of Advanced Sciences of Matter, Hiroshima Univ.
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Higashi S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ikeda M.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAGAI T.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SHIMIZU Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Higashi S.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ikeda M.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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