Higashi S. | Graduate School of Advanced Sciences of Matter, Hiroshima University
スポンサーリンク
概要
関連著者
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Higashi S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi S.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MIYAZAKI S.
Graduate School of Advanced Sciences of Matter, Hiroshima Univ.
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Ikeda M.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ikeda M.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami H
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Makihara K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Makihara K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nara Y.
Semiconductor Leading Edge Technology Inc.
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INUMIYA S.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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NARA Y.
Selete
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Pei Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Pei Y.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Inumiya S.
Semicondutor Leading Edge Technologies Inc.
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Mahboob S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kuroda A.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Mahboob S.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kohno A.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Katayama K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Katayama K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Hata H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kaku H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAGAI T.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kaku H.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Hata H.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MATSUMOTO R.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SHIMANOE K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OKUYAMA K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA A.
Grad. School of AdSM, Hiroshima Univ.
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YOSHINAGA H.
Grad. School of AdSM, Hiroshima Univ.
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MURAKAMI H.
Grad. School of AdSM, Hiroshima Univ.
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AZUMA D.
Grad. School of AdSM, Hiroshima Univ.
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MUNETAKA Y.
Grad. School of AdSM, Hiroshima Univ.
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HIGASHI S.
Grad. School of AdSM, Hiroshima Univ.
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MIYAZAKI S.
Grad. School of AdSM, Hiroshima Univ.
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AOYAMA T.
Fujitsu Laboratories Ltd.
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KOSAKA K.
Fujitsu Laboratories Ltd.
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SHIBAHARA K.
Grad. School of AdSM, Hiroshima Univ.
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SHIMIZU Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Shimanoe K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Yoshinaga H.
Grad. School Of Adsm Hiroshima Univ.
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Okuyama K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shibahara K.
Grad. School Of Adsm Hiroshima Univ.
著作論文
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
- Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
- Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
- Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
- Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
- Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories