Ikeda M. | Graduate School Of Advanced Sciences Of Matter Hiroshima University

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著作論文

Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
Vertical Projection of Surface Velocity Data Using the Variational Assimilation Method with Quasigeostrophic Dynamical Constraints
Importance of Clouds to the Decaying Trend and Decadal Variability in the Arctic Ice Cover
Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
A Box Model of Glacial-Interglacial Variability in the Japan Sea

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