Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
-
Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
-
Murakami H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
MURAKAMI H.
Department of Physics, Rikkyo University
-
Miyazaki S
Department Of Electrical Engineering Hiroshima University
-
Murakami H
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Ikeda M.
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
IKEDA M.
Department of Electrical Engineering, Hiroshima University
-
KOHNO A.
Department of Applied Physics, Fukuoka University
-
MIYAZAKI S.
Department of Electrical Engineering, Hiroshima University
-
HIROSE M.
Department of Electrical Engineering, Hiroshima University
-
Kohno A.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Hirose M.
Department Of Electrical Engineering Hiroshima University
-
Ikeda M.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Murakami H.
Department Of Physics Rikkyo University
関連論文
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)