Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Murakami H.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI H.

  Department of Physics, Rikkyo University

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Murakami H

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ikeda M.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• IKEDA M.

  Department of Electrical Engineering, Hiroshima University

• KOHNO A.

  Department of Applied Physics, Fukuoka University

• MIYAZAKI S.

  Department of Electrical Engineering, Hiroshima University

• HIROSE M.

  Department of Electrical Engineering, Hiroshima University

• Kohno A.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose M.

  Department Of Electrical Engineering Hiroshima University

• Ikeda M.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Murakami H.

  Department Of Physics Rikkyo University

関連論文

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• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
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• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
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• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
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