Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs

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概要

• 論文の詳細を見る

• Memory operation of metal-oxide-semiconductor(MOS) structures with a silicon quantum-dot(QD) floating gate has been demonstrated at room temperature. The unique hysteresis and the current bumps which are interpreted in terms of the electron charging or discharging of the QD floating gate have been observed in drain current versus gate voltage characteristics of QD floating-gate MOS field-effect transistors(FETs). From the analysis of the transient drain-current characteristics for a single-pulse gate bias, we also confirm that the multiple-step electron charging of the QDs occurs until reaching the stable state for one electron per dot.

• 社団法人電子情報通信学会の論文
• 2001-06-28

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Murakami H.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI H.

  Department of Physics, Rikkyo University

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Murakami H

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ikeda M.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• IKEDA M.

  Department of Electrical Engineering, Hiroshima University

• KOHNO A.

  Department of Applied Physics, Fukuoka University

• MIYAZAKI S.

  Department of Electrical Engineering, Hiroshima University

• HIROSE M.

  Department of Electrical Engineering, Hiroshima University

• Kohno A.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose M.

  Department Of Electrical Engineering Hiroshima University

• Ikeda M.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Murakami H.

  Department Of Physics Rikkyo University

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