Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ikeda M.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• IKEDA M.

  Department of Electrical Engineering, Hiroshima University

• YOSHIDA E.

  Department of Electrical Engineering, Hiroshima University

• KOHNO A.

  Department of Applied Physics, Fukuoka University

• MIYAZAKI S.

  Department of Electrical Engineering, Hiroshima University

• HIROSE M.

  National Institute of Advanced Industrial Science and Technology (AIST) Advanced Semiconductor Resea

• Kohno A.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose M.

  Department Of Electrical Engineering Hiroshima University

• Ikeda M.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

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