Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• YOSHIDA Yuichi

  Department of Dermatology, School of Medicine, Fukuoka University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki S

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• MIZUBAYASHI Wataru

  Department of Electrical Engineering, Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Mizubayashi Wataru

  Department Of Electrical Engineering Hiroshima University

• Yoshida Yuichi

  Department Of Dermatology Kyushu University Faculty Of Medicine

• Yoshida Yuichi

  Department Of Electrical Engineering Hiroshima University

• Yoshida Yuichi

  Department Of Bioresources Chemistry School Of Horticulture Chiba University

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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