Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy

スポンサーリンク

概要

• 論文の詳細を見る

• The valence band structure of the ultra-thin SiO_2/Si(111) interface has been studied by high resolution x-ray photoelectron spectroscopy. The absence of Si^<2+> derived from the deconvolution of the Si 2p core-level peak implies an atomically flat interface mainly formed by Si^<1+>. The energy shifts found in the Si 2p and O 1s core-level peaks are induced by charging effects and have been corrected. The valence bands for the ultra-thin (1.8-3.7nm thick) SiO_2 are obtained after subtracting the substrate Si contribution from the measured spectrum and by taking into account charging effects. The valence band alignment of the ultra-thin SiO_2/Si(111) interfaces is found to be 4.36±0.10eV regardless of oxide thickness.

• 社団法人電子情報通信学会の論文
• 1995-04-21

著者

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Yokoyama S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• YOKOYAMA Shin

  Research Center for Nanodevices and Systems, Hiroshima University

• FUKUDA Masatoshi

  Department of Electrical Engineering, Hiroshima University

• NAKAGAWA Kazuyuki

  Department of Electrical Engineering, Hiroshima University

• Bjorkman Claes

  Research Center for Integrated Systems, Hiroshima University

• ALAY Josep

  Research Center for Integrated Systems, Hiroshima University

• Nakagawa Kazuyuki

  Department Of Electrical Engineering Hiroshima University

• Yokoyama Shin

  Research Center For Integrated Systems Hiroshima University

• Alay Josep

  Research Center For Integrated Systems Hiroshima University

• Bjorkman Claes

  Research Center For Integrated Systems Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Fukuda Masatoshi

  Department Of Electrical Engineering Hiroshima University

関連論文

• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Imprint Property of Optical Mach-Zehnder Interferometer Using Sputter Deposited (Ba,Sr)TiO_3 at Low Temperature
• Low Temperature Fabrication of Monolithic Mach-Zehnder Optical Modulator on Silicon using Sputtered (Ba,Sr)TiO_3 and Mechanism of Transient Response
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Structure and Optical Band-Gap Energies of Ba_Sr_TiO_3 Thin Films Fabricated by RF Magnetron Plasma Sputtering
• Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Ba_Sr_TiO_3 Thin Films
• Structural and Optical Properties of Electro-Optic Material : Sputtered (Ba,Sr)TiO_3
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
• Luminescence from Thermally Oxidized Porous Silicon
• Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
• Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
• High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
• Amorphous Silicon Static Induction Transistor
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
• Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
• Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
• Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
• BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
• Chemical Stability of HF-Treated Si(111) Surfaces
• The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
• Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
• In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
• Phonon Interaction in the Luminescence of Porous Silicon
• Reabsorption of Visible Luminescence in Porous Si
• Visible Photoluminescence from Porous Silicon
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch
• Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
• An Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
• Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines
• Optically Interconnected Kohonen Net for Pattern Recognition
• High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
• New RAM-bus Memory System with Interchip Optical Interconnection
• Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
• Medium-Energy Ion Spectroscopy Using Ion Implanter
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
• Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
• Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
• A Study of Electrical Characteristics Improvements in Sub-0.1 μm Gate Length MOSFETs by Low Temperature Operation
• New Ar-Plasma Cleaning Process for Reduction of Al/TiSi_2 Contact Resistance
• Bipolar Voltage Pulse Induced Current : A Means for Reliable Extraction of Interface Trap Distribution in Ultrathin Oxides MOS Structures
• Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
• Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
• Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
• Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
• Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
• Fabrication Technologies for Double-SiO_2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot
• Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
• Effects of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering
• Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
• Atomic Layer Controlled Digital Etching of Silicon
• Amorphous Silicon Superlattice Thin Film Transistors
• Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method (Special Issue on Scientific ULSI Manufacturing Technology)
• Thickness-Shear Vibration Mode Characteristics of SrBi_4Ti_4O_-Based Ceramics
• Piezoelectric Properties of SrBi_4Ti_4O_-Based Ceramics
• High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
• Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure
• Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
• Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy
• Hydrogen Plasma Durability of Chemically Treated SnO_2 Thin Films
• Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
• Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch

もっと見る 閉じる

スポンサーリンク