Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
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概要
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The valence band structure of the ultra-thin SiO_2/Si(111) interface has been studied by high resolution x-ray photoelectron spectroscopy. The absence of Si^<2+> derived from the deconvolution of the Si 2p core-level peak implies an atomically flat interface mainly formed by Si^<1+>. The energy shifts found in the Si 2p and O 1s core-level peaks are induced by charging effects and have been corrected. The valence bands for the ultra-thin (1.8-3.7nm thick) SiO_2 are obtained after subtracting the substrate Si contribution from the measured spectrum and by taking into account charging effects. The valence band alignment of the ultra-thin SiO_2/Si(111) interfaces is found to be 4.36±0.10eV regardless of oxide thickness.
- 社団法人電子情報通信学会の論文
- 1995-04-21
著者
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Yokoyama S
Hiroshima Univ. Higashi‐hiroshima Jpn
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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FUKUDA Masatoshi
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kazuyuki
Department of Electrical Engineering, Hiroshima University
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Bjorkman Claes
Research Center for Integrated Systems, Hiroshima University
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ALAY Josep
Research Center for Integrated Systems, Hiroshima University
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Nakagawa Kazuyuki
Department Of Electrical Engineering Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Alay Josep
Research Center For Integrated Systems Hiroshima University
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Bjorkman Claes
Research Center For Integrated Systems Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Fukuda Masatoshi
Department Of Electrical Engineering Hiroshima University
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