Amorphous Silicon Static Induction Transistor
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-04-20
著者
-
OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
-
HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
-
Hirose Minoru
Process Development Division Fujitsu Limited
-
Ueda M
Univ. Tokushima Tokushima Jpn
-
Ueda M
The Institute Of Scientific And Industrial Research Osaka University
-
UEDA Masato
Department of Applied Chemistry, Faculty of Engineering, Osaka Institute of Technology
-
Osaka Y
Hiroshima Kokusaigakuin Univ. Hiroshima Jpn
-
Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
-
Ueda Masahiro
Department Of Techniques Faculty Of Education Fukui University
-
Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
関連論文
- YBa_2Cu_3O_ Angle Grain Boundary Junction on Si Bicrystal Substrate
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique : Condensed matter
- Microcrystallization in P-Doped Si:H Films at High Deposition Rate
- Photoinduced Absorption on Phosphorus and Nitrogen Doped a-Si:H Films Prepared at High Deposition-Rate
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Luminescence from Thermally Oxidized Porous Silicon
- Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- Amorphous Silicon Static Induction Transistor
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Phonon Interaction in the Luminescence of Porous Silicon
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Exciton Structure in Alkali-Halide Crystals
- Epitaxial Growth of Ba_2YCu_3O_x Thin Film on Epitaxial ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- Physical Properties of SiO_2-doped Si Films and Electroluminescence in Metal/SiO_2-doped Si/p-Si Diodes
- Preparation of B-Si-Ge Alloys by Sputter-Assisted-Plasma CVD
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Nonlinear I-V Characteristics of Bi_2Sr_2CaCu_2O_x Thin Films
- Preparation and Properties of Ultrathin High-T_c Superconducting Films on Si
- Fabrication of All-High-T_c Josephson Junction Using As-Grown YBa_2Cu_3O_x Thin Films
- Josephson Effect in Wide Superconducting Bridges Made by Epitaxial Ba_2YCu_3O_x Thin Films on YSZ/Si(100)
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- Quantum Size Effect and HRTEM Observation of CdSe Microcrystallites Doped into SiO_2-Glass Films Prepared by Rf-Sputtering
- A New Method of Measuring Internal Stress in Thin Films Deposited on Silicon by Raman Spectroscopy
- Raman Scattering Study of Tehrmal SiO_2 Layers Grown on Silicon
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
- Photoluminescence from Si Network in SiO_2-Doped Si Films
- Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
- Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers
- Formation and Properties of Cubic Boron Nitride Films on Tungsten Carbide by Plasma Chemical Vapor Deposition
- CuCl Microcrystallite-Doped SiO_2 Glass Thin Films Prepared by RF Sputtering
- Preparation and Properties of In_xGa_As Microcrystallites Embedded in SiO_2 Glass Films
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Semiconducting CdTe Microcrystalline-Doped SiO_2 Glass Thin Films Prepared by Rf-Sputtering
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
- Current Transport in Doped Polycrystalline Silicon
- Note on Localized States in Amorphous Germanium