Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Hirose Minoru

  Process Development Division Fujitsu Limited

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Yoshida T

  Department Of Electronic Engineering Faculty Of Engineering Takushoku University

• Yoshida Tomio

  Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.

• YOSHIDA Takeshi

  Department of Gastroenterology, Hokkaido University Graduate School of Medicine

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Yoshida Tomoaki

  Department Of Materials Science Faculty Of Engineering Tohoku University

• Yoshida Toshiyuki

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Yoshida T

  Matsushita Electric Co. Tochigi Jpn

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Hirose M

  Materials Research Center Tdk Corporation

• Yoshida T

  Fukuoka Univ. Fukuoka Jpn

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Yoshida Takeshi

  Department Of Epidemiology Medical Research Institute Tokyo Medical And Dental University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Yoshida Takeshi

  Department Of Biochemistry Hokkaido University School Of Dentistry

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Yoshida Takeshi

  Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Yoshida Takeshi

  Department of Applied Chemistry, Faculty of Engineering, Kanagawa University

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