Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Kawabata K
Division Of Physics Graduate School Of Science Hokkaido University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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KAWABATA Keishi
Department of Electronics, Hiroshima Institute of technology
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SHIRATSUKI Yoshiyuki
Department of Electrical Engineering, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Kawabata Keishi
Department Of Electronics Engineering Hiroshima Institute Of Technology
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Kawabata K
Transdisciplinary Life Science Course Faculty Of Advanced Life Science Hokkaido University
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Shiratsuki Yoshiyuki
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Kawabata Kazushige
Division Of Biological Sciences Graduate School Of Science
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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