Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-07-01

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Hirose Minoru

  Process Development Division Fujitsu Limited

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Sakikawa Nobuki

  Department of Electrical Engineering, Hiroshima University

• SHISHIDA Yoshinori

  Department of Electrical Engineering, Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Shishida Yoshinori

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Hirose M

  Materials Research Center Tdk Corporation

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Sakikawa Nobuki

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
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• A New Technique of Boron Doping in Si:H Films
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