Miyazaki S | Department Of Electrical Engineering Hiroshima University

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概要

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著作論文

Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
Analysis of Tunnel Current through Ultrathin Gate Oxides
Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
Modeling of Soft Breakdown in Ultrathin Gate Oxides
Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors

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