IKEDA Mitsuhisa | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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概要
- 同名の論文著者
- Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univの論文著者
関連著者
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Miyazaki S
Graduate School Of Advanced Sciences And Matters Hiroshima University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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IKEDA Mitsuhisa
Hiroshima University
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Sakaike Kohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hayashi Shohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Akazawa Muneki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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MIYAZAKI Seiichi
Hiroshima University
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kohno Atsushi
Department of Radiology, Kobe University
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Ikeda M
Sony Corporation Research Center
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Hirose Minoru
Process Development Division Fujitsu Limited
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Kohno A
Operative Dentistry I Tsurumi University School Of Dental Medicine
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Kohno Atsushi
Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research
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Yoshida E
Faculty Of Pharmaceutical Sciences Chiba University
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Yoshida Eiji
Ntt Access Network Systems Laboratories Optical Soliton Transmission Research Group
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Yoshida E
Institute Of Applied Physics University Of Tsukuba
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SHIMIZU Naoji
Department of Electrical Engineering, Hiroshima University
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YOSHIDA Eiji
Department of Electrical Engineering, Hiroshima University
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Shimizu Naoji
Department Of Electrical Engineering Hiroshima University
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SHIMIZU Naofumi
NTT Optical Network Systems Laboratories
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Ito M
Wakayama Univ. Wakayama Jpn
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Shimizu N
Department Of Electrical Engineering Hiroshima University
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Hirose M
Materials Research Center Tdk Corporation
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kobayashi Yoshitaka
Department Of Orthopaedic Surgery Fukushima Medical University School Of Medicine
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Yoshida Eiji
Department Of Dentistry For Children And Disable Person Division Of Oral Functional Science Hokkaido
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Yoshida Eiji
Department Of Dental Engineering Tsurumi University School Of Dental Medicine
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Nakamura Shogo
Department Of Biology Faculty Of Science Toyama University
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Kohno Atsushi
Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jounan-ku, Fukuoka 814-0180, Japan
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Morisaki Seiji
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Nakamura Shogo
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami H
Institute For Molecular Science
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Kohno Atsushi
Department Of Electrical Engineering Hiroshima University
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Shimizu Yusuke
Department Of Applied Physics Graduate School Of Science Fukuoka University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Ikeda M
Tdk Electronic Device Business Group Akita Jpn
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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Murakami Hisashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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MIYAZAKI Seiichiand
Department of Electrical Engineering, Hiroshima University
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SHIBA Kazutoshi
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kazuyuki
Department of Electrical Engineering, Hiroshima University
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Nakagawa Kazuyuki
Department Of Electrical Engineering Hiroshima University
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Shimizu Yusuke
Department Of Applied Physics And Physico-informatics Keio University
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Shimizu Yusuke
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Murakami H
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Fujita Yuji
Department Of Computer Science And Systems Engineering Faculty Of Engineering Miyazaki University
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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KOHNO Atsushi
Department of Electrical Engineering, Hiroshima University
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Katsunori Makihara
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Makihara Katsunori
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Kawanami Akira
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Murakami Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Murakami Hideki
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan
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MIYAZAKI Seiichi
Department of Electrical Engineering, Hiroshima University
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Higashi Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Higashi Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Matsumoto Ryuji
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Akira Kawanami
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Morisawa Naoya
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Nakanishi Sho
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Seiichi Miyazaki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Sho Nakanishi
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Naoya Morisawa
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Shimizu Yusuke
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan
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IKEDA Mitsuhisa
Department of Electrical Engineering, Hiroshima University
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Ikeda Mitsuhisa
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Mitsuhisa Ikeda
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Ikeda Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan
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Kobayashi Yoshitaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kamikura Takahiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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FUJITA YUJI
Department of Chemical Engineering, Yamaguchi University
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Sakaike Kohei
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Murakami Hideki
Institute for Molecular Science
著作論文
- Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures
- Formation of Cobalt and Cobalt-Silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma
- Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
- Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films
- Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases
- Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication
- Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication (Special Issue : Dry Process)