Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication
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概要
- 論文の詳細を見る
A novel layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films induced by near-infrared semiconductor-diode-laser (SDL) irradiation has been investigated. The a-Si films supported by narrow quartz columns on a starting quartz substrate and a counter substrate [glass and poly(ethylene terephthalate)] were in face-to-face contact, and an SDL irradiated the a-Si films with midair structure. After SDL irradiation, the Si films were completely transferred and crystallized simultaneously on the counter substrates. In-situ monitoring revealed that the layer transfer took place either in the solid phase or the liquid phase followed by phase transformation in the cooling period. High performance polycrystalline Si thin-film transistors were successfully fabricated on the transferred Si films, which showed a high on/off ratio of more than 10^{5} and a field-effect mobility as high as 268 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>.
- 2013-05-25
著者
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Sakaike Kohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Kobayashi Yoshitaka
Department Of Orthopaedic Surgery Fukushima Medical University School Of Medicine
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Hayashi Shohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Nakamura Shogo
Department Of Biology Faculty Of Science Toyama University
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Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Kobayashi Yoshitaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Akazawa Muneki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Morisaki Seiji
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Nakamura Shogo
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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