Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
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概要
- 論文の詳細を見る
The crystallization of a-Si films on glass substrates using the plasma jet crystallization (PJC) technique and its application to thin-film transistor fabrication were studied. Amorphous Si (a-Si) films deposited by plasma-enhanced chemical vapor deposition (PECVD) of 50% SiH4 diluted with H2 were crystallized by thermal plasma jet under the power of 1.6 to 2.6 kW input to the plasma source and the substrate scan speed of 170 to 1000 mm/s. The crystallinity of the films was improved by treating the films at a higher input power for a longer duration. Thin-film transistors (TFTs) fabricated using the crystallized films showed good electrical characteristics. By increasing the input power from 1.86 to 2.29 kW in the crystallization, the average field-effect mobility was increased from 42 to 61 cm2$\cdot$V-1$\cdot$s-1, and the threshold voltage was decreased from 4.0 to 3.4 V. These results indicate that the PJC technique is a very promising low-temperature process technology.
- Japan Society of Applied Physicsの論文
- 2005-01-10
著者
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SAMESHIMA Toshiyuki
Department of Electrical and Electric Engineering, Tokyo University of Agriculture and Technology
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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KAKU Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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Ando Nobuyuki
Department Of Applied Chemistry Faculty Of Engineering Chiba University
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Watakabe Hajime
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Sameshima Toshiyuki
Department of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Watakabe Hajime
Department of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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Ando Nobuyuki
Department of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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Kaku Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advance Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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