Defect Reduction Treatment for Plasma–Tetraethylorthosilicate–SiO2 by High-Pressure H2O Vapor Heat Treatment
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概要
- 論文の詳細を見る
Improvements in the electrical and structural properties of tetraethylorthosilicate (TEOS) SiO2 films fabricated by plasma-enhanced chemical vapor deposition (PECVD) method were investigated using high-pressure H2O vapor heat treatment. The density of interface trap states was reduced from $3.3\times 10^{12}$ (initial) to $5.1\times 10^{10}$ cm-2 eV-1 by $1.3\times 10^{6}$ Pa H2O vapor heat treatment at 260°C for 9 h. The density of fixed charges was also reduced from $6.1\times 10^{11}$ to $1.3\times 10^{11}$ cm-2. The full width at half-maximum (FWHM) of the optical absorption band corresponding to vibration of Si–O–Si bonding was reduced from 82.9 to 78.1 cm-1. Narrowing in FWHM of the Si 2p core level peak measured by X-ray photoelectron spectroscopy (XPS) was also observed. The reduction in the FWHM probably results from improvement of the Si–O bonding network.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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Strutz Thomas
Unaxis Japan
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SAMESHIMA Toshiyuki
Department of Electrical and Electric Engineering, Tokyo University of Agriculture and Technology
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Watakabe Hajime
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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OITOME Teruki
UNAXIS Japan
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Sameshima Toshiyuki
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Tokyo 184-8588, Japan
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Watakabe Hajime
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Tokyo 184-8588, Japan
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Kohno Atsushi
Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jounan-ku, Fukuoka 814-0180, Japan
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Kohno Atsushi
Department of Applied Physics, Fukuoka University, Fukuoka 814-0180, Japan
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Strutz Thomas
UNAXIS Japan, Osaka 564-0037, Japan
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