Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-01
著者
-
HIGASHI Seiichiro
Base Technology Research Center, Seiko Epson Corp.
-
Sameshima T
Tokyo Univ. Agriculture And Technol. Koganei Jpn
-
SAMESHIMA Toshiyuki
Department of Electrical and Electric Engineering, Tokyo University of Agriculture and Technology
関連論文
- Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
- Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
- Defect Reduction Treatment for Plasma-Tetraethylorthosilicate-SiO_2 by High-Pressure H_2O Vapor Heat Treatment
- Stress in Pulsed-Laser-Crystallized Silicon Films
- Experimental Study of the Hyper-Raman Scattering Due to Raman Inactive Lattice Vibration in SrTiO_3
- Observation of the Phonon Polariton in the Centrosymmetric Crystal of SrTiO_3 by Hyper-Raman Scattering
- Observation of Hyper-Raman Scattering Spectra Due to Lattice Vibration in SrTio_3
- Stress in Pulsed-Laser-Crystallized Silicon Films
- Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
- Defect Reduction Treatment for Plasma–Tetraethylorthosilicate–SiO2 by High-Pressure H2O Vapor Heat Treatment
- Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor