Stress in Pulsed-Laser-Crystallized Silicon Films
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-01
著者
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HIGASHI Seiichiro
Base Technology Research Center, Seiko Epson Corp.
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Sameshima T
Tokyo Univ. Agriculture And Technol. Koganei Jpn
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SAMESHIMA Toshiyuki
Department of Electrical and Electric Engineering, Tokyo University of Agriculture and Technology
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Ando Nobuyuki
Base Technology Research Center Seiko Epson Corp.
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Ando Nobuyuki
Department Of Food Science And Technology Faculty Of Agriculture Kyoto University
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KAMISAKO Koichi
Department of Engineering, Tokyo University of Agriculture and Technology
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- Stress in Pulsed-Laser-Crystallized Silicon Films
- Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
- Defect Reduction Treatment for Plasma–Tetraethylorthosilicate–SiO2 by High-Pressure H2O Vapor Heat Treatment
- Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers
- Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor