Analysis of Deposition Rate Distribution in the Photo-CVD of a-Si by a Unified Reactor with a Lamp
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概要
- 論文の詳細を見る
The deposition rate distribution in the photochemical vapor deposition (photo-CVD) of hydrogenated a-Si films from monosilane or disilane by a unified reactor with a lamp has been investigated. When the distance between a gas outlet and a substrate is kept short, a characteristic distribution of deposition rate occurs because of the influence of a reactant gas flow. Such distribution can be explained by analyzing a rate equation which is represented by terms of generation, diffusion and extinction of activated species. If we assume the activated species are SiH_2 or SiH_3 radicals, the lifetime of activated species can be estimated as 0.02 s.
- 社団法人応用物理学会の論文
- 1984-10-20
著者
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KAMISAKO Koichi
Department of Engineering, Tokyo University of Agriculture and Technology
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Tarui Yasuo
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Tarui Yasuo
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Aota Katsumi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture And Techn
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Aota Katsumi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Kamisako Koichi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Tarui Yasuo
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Kamisako Koichi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Kamisako Koichi
Department of Electrical and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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