Effect on Al2O3 Doping Concentration of RF Magnetron Sputtered ZnO:Al Films for Solar Cell Applications

概要

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Al-doped ZnO (AZO) films were deposited onto glass substrates by RF magnetron sputtering for solar cell applications. The effects of the Al2O3 doping concentration on the structural, electrical, and optical properties of the AZO films were investigated. As the Al2O3 doping concentration was increased to 4.0 wt %, X-ray diffraction (XRD) showed a deterioration in the (002) peak intensity and a shift towards a higher angle. The best electrical properties ($\rho = 9.8\times 10^{-4}$ $\Omega$ cm, $\mu_{\text{H}} = 22$ cm2 V-1 s-1, and $n_{\text{e}} = 2.89\times 10^{20}$ cm-3) were obtained in the AZO sample containing 2 wt % Al2O3. Optical transmission ${>}83$% in the visible range was also observed and the optical bandgap was increased to 3.63 eV at an Al2O3 concentration of 4 wt %. For photoluminescence (PL) spectra, one UV emission peak at approximately 3.2 eV and a broad peak in the visible range from 2.3 to 2.7 eV were observed at Al2O3 doping concentrations ranging from 0–2.0 wt %. Blue emission at 2.67 eV, which indicates a non-stoichiometric structure, was only observed in the 4 wt % doped AZO films.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-07-25