Stress in Pulsed-Laser-Crystallized Silicon Films
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概要
- 論文の詳細を見る
Stress in pulsed-laser-crystallized silicon films was investigated using high-resolution Raman scattering measurements. Film stress was evaluated based on the peak shift of transverse optical (TO) phonon of crystalline silicon in Raman scattering spectra. The tensile stress in laser-crystallized 50-nm-thick silicon films on glass substrates increased from $3.5\times 10^{8}$ Pa to $9.7\times 10^{8}$ Pa as the film deposition temperature increased from 200°C to 480°C. The peak shift of laser-crystallized microcrystalline silicon ($\mu$c-Si) films revealed that the tensile stress introduced by laser irradiation was $2.3\times 10^{8}$ Pa at most. These results indicate that the strong tensile stress is introduced by the silicon film deposition rather than by the pulsed-laser crystallization. Also, the authors demonstrate that pulsed-laser crystallization maintains the existing stress at the growth initiation sites in the bottom region of silicon films.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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HIGASHI Seiichiro
Base Technology Research Center, Seiko Epson Corp.
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SAMESHIMA Toshiyuki
Department of Electrical and Electric Engineering, Tokyo University of Agriculture and Technology
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Ando Nobuyuki
Department Of Applied Chemistry Faculty Of Engineering Chiba University
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Kamisako Koichi
Department of Electrical and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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Kamisako Koichi
Department of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Ando Nobuyuki
Department of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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