Effects of Hydrogen Radical Treatment on Fabrication of Catalyst Nanoparticles from Metal Oxide Film at Low Temperature and Synthesis of Silicon Nanowires
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概要
- 論文の詳細を見る
Metal catalysts of indium nanoparticles were fabricated at a low temperature from an indium oxide film coated on a glass substrate under hydrogen radical treatment. It is found that by increasing the time of hydrogen radical treatment, the spherical surface of the catalysts is changed progressively. However, the quantities of nanoparticles remain constant. Subsequently, silicon nanowires were synthesized on the fabricated substrates at a temperature of 400 °C. Their quantity decreased with increasing hydrogen radical treatment time. On the basis of field-emission scanning electron microscopy, it is expected that the surface shape of catalysts fabricated at a low temperature directly affects the quantity of the silicon nanowires. Furthermore, a method of fabricating metal nanoparticles and a growth model of silicon nanowires based on hydrogen radical treatment are suggested.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-01-25
著者
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Aoyagi Minoru
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Jeon Min-Sung
Department of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Kamisako Koichi
Department of Electrical and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan
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Kamisako Koichi
Department of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Tomitsuka Yoshihiro
Department of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Aoyagi Minoru
Department of Electrical and Electronics Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama 345-8501, Japan
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