Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor Deposition
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概要
- 論文の詳細を見る
For the first time, photo-CVD of transparent and conducting SnO_2 films has been achieved under irradiation by a low-pressure Hg lamp. It was confirmed that both resonance lines (254 nm, 185 nm) are effective for the activation of CVD-sources (0_2, SnCl_4, SbCl_5). The structural, electrical and optical properties of undoped and Sb-doped SnO_2 films prepared by the photo-CVD method were evaluated. Resistivity as low as 5.48×10^<-3> ohm・cm with high optical transmission (80%) was obtained in Sb-doped SnO_2 films (80 nm in thickness).
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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Tarui Yasuo
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Tarui Yasuo
Department Of Electronic Engineering Tokyo University Of Agriculture & Technology
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YAMAGISHI Koji
Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Tec
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Tabuchi Toshiya
Department Of Electronic Engineering Tokyo University Of Agriculture & Technology:r & D Cent
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Yamagishi Koji
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Yamagishi Koji
Department Of Electronic Engineering Tokyo University Of Agriculture & Technology:vlsi Developme
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