Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic Memories
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概要
- 論文の詳細を見る
Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. We attempted to form a tantalum oxide film from Ta(OCH_3)_5 at a low temperature by photo-CVD method. Our evaluation shows that the photo-CVD film obtained in this study has good step coverage, high dielectric constant (20-24), and low leakage current, and is superior to the thermal-CVD film in various characteristics.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Tarui Yasuo
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Yamagishi Koji
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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