Low-Temperature Growth of Silicon Dioxide Film by Photo-Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Silicon dioxide films have been prepared from monosilane and oxygen gases using a low-pressure mercury lamp. The deposition rate is increased with UV irradiation and the activation energy is reduced to as low as 0.22 eV. The contribution of the 254 nm light to the deposition is concluded to be very small. The refractive index of the deposited film is 1.44〜1.46. The infrared absorption peaks related with Si-H bonding do not appear in the photo-CVD film.
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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Tarui Yasuo
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Aota Katsumi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Tarui Yasuo
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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Aota Katsumi
Department Of Electronic Engineering Faculty Of Technology Tokyo University Of Agriculture & Tec
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HIDAKA Junichi
Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Techn
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Hidaka J
Nippon Sanso Corp. Ibaraki
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