Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2010-06-25

著者

• MIYAZAKI Seiichi

  Hiroshima University

• MURAKAMI Hideki

  Department of Geology, Faculty of Science, Kochi University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Murakami Hideki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Murakami Hideki

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• HIGASHI Seiichiro

  Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Murakami Hideki

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• HAYASHI Shohei

  Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science

• Hayashi Shohei

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

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