Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics
- Guiding principle of energy level controllability of silicon dangling bonds in HfSiON (Special issue: Solid state devices and materials)
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
- Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering