Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities

スポンサーリンク

概要

• 論文の詳細を見る

• A stacked structure consisting of ∼1nm-thick MgO and 4nm-thick HfO2 was formed on thermally grown SiO2/Si(100) by MOCVD using dipivaloymethanato (DPM) precursors, and the influences of N2 anneal on interfacial reaction and defect state density in this stacked structure were examined. The chemical bonding features of Mg atom were evaluated by using an Auger parameter independently of positive charge-up during XPS measurements. With Mg incorporation into HfO2, a slight decrease in the oxidation number of Mg was detectable. The result suggests that Mg atoms are incorporated preferentially near oxygen vacancies in the HfO2, which can be responsible for a reduction of the flat band voltage shifts observed from C-V characteristics.

• 2011-05-01

著者

• MURAKAMI Hideki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• OHTA Akio

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Ohta Akio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Kanme Daisuke

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Murakami Hideki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Murakami Hideki

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Higashi Seiichiro

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

関連論文

• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
• Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
• Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-Nitrided Si(100)
• Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
• Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics
• Guiding principle of energy level controllability of silicon dangling bonds in HfSiON (Special issue: Solid state devices and materials)
• Overdense Plasma Production Using Electron Cyclotron Waves
• Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
• New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
• Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
• Special Section on High-κ Gate Dielectrics
• Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
• Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
• Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
• Native Oxidation Growth on Ge(111) and (100) Surfaces
• Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication
• Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
• Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
• Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
• Formation of high-density Pt nanodots on SiO2 induced by millisecond rapid thermal annealing using thermal plasma jet for floating gate memory (Special issue: Dry process)
• Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using Atomic Force Microsope/Kelvin Probe Technique
• Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation
• Evaluation of chemical structure and resistance switching characteristics of undoped titanium oxide and titanium-yttrium mixed oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
• Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
• Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density (Special Issue : Solid State Devices and Materials (2))
• Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium--Yttrium Mixed Oxide
• Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes
• Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
• Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-Nitrided Si(100)
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
• Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
• Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
• Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
• Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
• Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics
• Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
• Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
• Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots
• Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
• Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases
• Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
• Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
• X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
• Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum- Dots Hybrid Floating Gate in MOS Structures
• Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
• Highly-Crystallized Ge:H Film Growth from GeH
• Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
• Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

もっと見る 閉じる

スポンサーリンク