Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories

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概要

• 論文の詳細を見る

• We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H2 plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from ∼3.4 to ∼ 6.5×1011 cm-2 while the dot size distribution was changed from ∼7 to ∼1.5 in average dot height with ∼40% variation in full-width at half maximum. We also fabricated MOS capacitors with a Pd-nanodots floating gate and confirmed the flat-band voltage shift in capacitance-voltage characteristic due to electron injection to and emission from the dots floating gate.

• （社）電子情報通信学会の論文
• 2009-05-01

著者

• SHIMANOE Kazuhiro

  Hiroshima University

• MAKIHARA Katsunori

  Hiroshima University

• IKEDA Mitsuhisa

  Hiroshima University

• MIYAZAKI Seiichi

  Hiroshima University

• Makihara Katsunori

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Makihara Katsuonri

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

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