Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
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概要
- 論文の詳細を見る
A high-temperature oxygen annealing (HiTOA) process has been developed to recover the degradation of the electrical characteristics due to the nitrogen incorporation into the HfAlOx film. The HiTOA process was carried out after the introduction of the nitrogen atoms. This process affected the bonding configuration of the nitrogen atom coordinated to the hafnium atom, and reconverted the nitrogen atom into an oxygen one. Therefore, this substitution markedly recovered the gate leakage current through the HfAlOxN film with a slight increase in the equivalent oxide thickness. Additionally, it significantly improved the effective mobility of n+ polycrystalline silicon (poly-Si) gate n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Tominaga Koji
Mirai-aset Aist
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Nabatame Toshihide
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Nishimura Tomoaki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Iwamoto Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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