Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Nabatame Toshihide

  Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva

• Nabatame T

  Aist Tsukuba Jpn

• Nabatame Toshihide

  Mirai-aset Advanced Industrial Science And Technology (aist)

• Nabatame Toshihide

  Hitachi Research Laboratory Hitachi Ltd.

• Nabatame Toshihide

  Mirai Project Association Of Super-advanced Electronics Technology (aset)

• SHIMOGAKI Yukihiro

  Department of Materials Engineering, The University of Tokyo

• Wang W

  National Tainan Teachers Coll. Tainan Twn

• Wang Wenwu

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo

• Shimogaki Y

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Univ. Tokyo Tokyo Jpn

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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