Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity

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Chemical vapor deposition titanium nitride (CVD-TiN) films were deposited from TiCl4 and NH3 at 410°C, that was sufficiently low for making ULSI multi-level interconnections. We investigated the Cl content and resistivity of CVD-TiN films as a function of TiCl4 and NH3 partial pressure ($P_{\text{TiCl$_{4}$}}$, $P_{\text{NH$_{3}$}}$). We found that $\text{Ti}/(\text{Ti}+\text{N})$ ratio was almost constant against different $P_{\text{TiCl$_{4}$}}$ and $P_{\text{NH$_{3}$}}$ conditions, while the resistivity and residual chlorine concentration were sensitive to these conditions. The lowest resistivity of 480 μ$\Omega$$\cdot$cm and the lowest Cl concentration of 2% were achieved in the condition of the step coverage of 96% and the throughput of 16 nm/min when $P_{\text{TiCl$_{4}$}} = 0.01$ Torr, and $P_{\text{NH$_{3}$}} = 0.25$ Torr, respectively. These values may be further improved by using flow modulation method.
Japan Society of Applied Physicsの論文
2004-04-15