Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-04-01
著者
-
Oh Ho-jin
Department Of Materials Engineering School Of Engineering University Of Tokyo
-
Oh Ho-jin
Department Of Materials Engineering University Of Tokyo
-
Shimogaki Yukihiro
Department Of Materials Engineering University Of Tokyo
-
Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
-
Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
-
Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
-
Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
関連論文
- Measurement of Secondary Electron Emission Coefficient (γ) of MgO Protective Layer with Various Crystallinities
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- GaN-Based High-Speed Intersubband Optical Switches
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Highly-Permissible Alignment Tolerance of Back-Illuminated Photo-Diode Array Attached with a Self-Aligned Micro Ball Lens
- Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
- Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
- Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
- Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Diffraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol–Gel Silica Film by Laser Irradiation
- Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
- Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
- Source Gas Dependency of Amorphous Fluorinated Carbon Film Properties Prepared by Plasma Enhanced Chemical Vapor Deposition Using C4F8, C4F6, and C5F8 Gases
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
- Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
- Physical and Chemical Contributions of Interfacial Impurities to Film Adhesion : Surfaces, Interfaces, and Films
- Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
- Four Channel Ridge DFB Laser Array for 1.55μm CWDM Systems by Wide-Stripe Selective Area MOVPE(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl4 and NH3
- Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Special Section on Recent Advances in Integrated Photonic Devices
- Size and Shape Transformation of TiO_2 Nanoparticles by Irradiation of 308-nm Laser Beam
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
- Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring (Special Issue : Photovoltaic Science and Engineering)
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
- Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
- Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Design and Simulation of InP1×N Planar Optical Switch Based on Ream Deflection
- Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique
- Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor
- Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
- Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal--Organic Vapor Phase Epitaxy
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Zn and S Doping in GaAs Selective Area Growth by Metal–Organic Vapor Phase Epitaxy
- All-Optical Flip-Flop Based on Coupled-Mode DBR Laser Diode for Optically Clocked Operation
- Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide
- Dynamic Operation of All-Optical Flip-Flops with Distributed Bragg Reflectors for Self-Routing of 10-Gbit/s Optical Packets
- In Situ Observation of Initial Nucleation and Growth of Chemical Vapor Deposition of Copper by Surface Reflectivity Measurement
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Investigation of the Modulation Efficiency of InGaAsP/InP Ridge Waveguide Phase Modulators at 1.55 μm
- Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects
- Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
- In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Size Controlled Formation of Gold Nanoparticles Using Photochemical Grwoth and Photothermal Size Reduction by 308 nm Laser Pulses
- First Demonstration of TE Mode Nonreciprocal Propagation in an InGaAsP/InP Active Waveguide for an Integratable Optical Isolator
- InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
- Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
- AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
- Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide
- Compact Optical Buffer Module for Intra-Packet Synchronization Based on InP 1×8 Switch and Silica-Based Delay Line Circuit
- GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model
- Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
- Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
- Compact Optical Buffer Module for Intra-Packet Synchronization Based on InP 1×8 Switch and Silica-Based Delay Line Circuit