Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
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概要
- 論文の詳細を見る
Three Cu-precursors [Cu(hfac)2, Cu(DPM)2, and Cu(acac)2] for supercritical fluid deposition (SCFD) were evaluated based on their adhesion strength onto a TiN underlayer for ULSI metallization. Although the fluorinated precursor, Cu(hfac)2, has the highest solubility in supercritical CO2 among these three precursors, the deposited Cu film was hazy and had poor adhesion property due to the fluorine at the interface of Cu and its TiN underlayer. The two non-fluorinated precursors, Cu(DPM)2 and Cu(acac)2, dramatically improved the adhesion property of the deposited Cu film. Although Cu(acac)2 has the lowest solubility among these precursors, it had the lowest nucleation temperature and much smoother surface morphology, which are crucial for ULSI metallization.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Momose Takeshi
Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Momose Takeshi
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 163-8656, Japan
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Sugiyama Masakazu
Department of Electronic Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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